features 1 of 8 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2006, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . inp hbt ldmos rf mems SGB-2233(z) dc to 4.5ghz active bias gain block rfmd?s SGB-2233 is a high performance sige hbt mmic amplifier utilizing a dar- lington configuration with an active bias network. the active bias network provides stable current over temperature and process beta variations. designed to run directly from a 3vto5v supply the SGB-2233 does not require a drop resistor as compared to typical darlington amplifiers. this robust amplifier features a class 1c esd rating, low thermal resistance, an d unconditional stability. the SGB-2233 product is designed for high linearity 3v gain block applications that require small size and minimal external componen ts. it is on chip matched to 50 and an exter- nal bias inductor choke is required for the application band. vcc nc nc gnd nc nc nc vbias nc nc nc rfin nc rfout nc nc active bias ? high reliability sige hbt technology ? robust class 1c esd ? simple and small size ? p 1db =6.7dbm at 1950mhz ? ip 3 =19.0dbm at 1950mhz ? low thermal resistance=221c/w applications ? 3v battery operated applica- tions ? lo buffer amp ? rf pre-driver and rf receive path eds-103079 rev h preliminary 9 rfmd green, rohs compliant, pb-free (z part number) package: 3x3 qfn, 16-pin SGB-2233(z) dc to 4.5ghz active bias gain block parameter specification unit condition min. typ. max. small signal gain 13.9 db 850mhz 11.4 12.9 14.4 db 1950mhz 12.5 db 2400mhz output power at 1db compression 7.9 dbm 850mhz 5.2 6.7 dbm 1950mhz 6.4 dbm 2400mhz output third order intercept point 20.5 db 850mhz 16.5 19.0 db 1950mhz 19.0 db 2400mhz noise figure 4.2 5.2 db 1950mhz frequency of operation dc 4500 mhz input return loss 13.5 19.5 db 1950mhz output return loss 12.7 16.7 db 1950mhz current 21.0 25.0 29.0 ma thermal resistance 221 c/w junction to backside test conditions: z 0 =50 , v cc =3v, i c =25ma, t=30c
2 of 8 preliminary eds-103079 rev h 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . SGB-2233(z) detailed performance table: v cc =3v, i c =25ma, t=25c, z=50 simplified device schematic absolute maximum ratings parameter rating unit current (i c total) 60 ma max device voltage (v d )5v max rf input power 20 dbm power dissipation 0.2 w max junction temperature (t j ) 150 c operating temperature range (t l ) -40 to + 85 c max storage temperature -40to+150 c operation of this device beyond any one of these limits may cause permanent dam- age. for reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. bias conditions should also satisfy the following expression: i d v d <(t j -t l )/r th , j-l parameter unit 100 mhz 500 mhz 850 mhz 1950 mhz 2400 mhz 3500 mhz small signal gain (g) db 14.2 14.1 13.9 12.9 12.5 11.2 output 3rd order intercept point (oip 3 ) dbm 21.5 20.5 19.0 19.0 output power at 1db compression (p 1db ) dbm 8.2 7.9 6.7 6.4 input return loss (irl) db 32.3 25.8 23.4 19.5 18.9 14.3 output return loss (orl) db 34.5 25.8 22.0 16.7 16.3 15.4 reverse isolation (s 12 ) db 17.7 18.0 18.2 18.9 19.2 20.2 noise figure (nf) db 4.3 3.9 3.9 4.2 4.6 5.0 caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the devi ce under absolute maximum rating condi- tions is not implied. rohs status based on eudirective2002/95/ec (at time of this document revision). the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. 16 1 4 58 9 12 13 15 14 2 3 11 10 67 active bias
3 of 8 preliminary eds-103079 rev h 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . SGB-2233(z) evaluation board data (v cc =v bias =3.0v, i c =25ma) bias tee substituted for dc feed inductor (l1) gain vs frequency 10.0 11.0 12.0 13.0 14.0 15.0 16.0 0.40.91.41.92.4 frequency (ghz) gain (db) +25c +85c -40c oip3 vs. frequency 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 0.40.91.41.92.4 frequency (ghz) oip3 (dbm) +25c +85c 0c -20c -40c p1db vs. frequency 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0.40.91.41.92.4 frequency (ghz) p1db (dbm) +25c +85c 0c -20c -40c noise figure vs. frequency 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 frequency (ghz) noise figure (db) +25c +85c -40c ic vs. temperature 0. 0150 0. 0170 0. 0190 0. 0210 0. 0230 0. 0250 0. 0270 0. 0290 0. 0310 + 85c + 25c0c -20c -40c temperature ic (ma) current vs. voltage 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 0.045 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 vc (volts) ic (a)
4 of 8 preliminary eds-103079 rev h 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . SGB-2233(z) evaluation board data (v cc =v bias =3.0v, i c =25ma) bias tee substituted for dc feed inductor (l1) cont. l s 21 l vs. frequency 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 frequency (ghz) s 21 (db) +25c +85c -40c l s 11 l vs. frequency -35.0 -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 0.01.02.03.04.05.06.0 frequency (ghz) s 11 (db) +25c +85c -40c l s 12 l vs. frequency -30.0 -25.0 -20.0 -15.0 -10.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 frequency (ghz) s 12 (db) +25c +85c -40c l s 22 l vs. frequency -35.0 -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 frequency (ghz) s 22 (db) +25c +85c -40c
5 of 8 preliminary eds-103079 rev h 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . SGB-2233(z) recommended land pattern dimensions in millimeters (inches) recommended pcb solderma sk for land pattern pin function description 1, 2, 4, 6, 7, 8, 11, 12, 14 nc these are no connect pins. leave them unconnected on the pc board. 3rf in rf input pin. a dc voltage should not be connected externally to this pin 5gnd an extra ground pin that is connected to the backside exposed paddle. connection is optional. 10 rf out rf output pin. bias is applied to the darlington stage thru this pin. 13 vbias this pin sources the current from the active bias ci rcuit. connect to pin 10 thru an inductor choke. 16 vcc this is vcc for the active bias circuit. back- side gnd the backside exposed paddle is the main electrical gnd and requir es multiple vias in the pc board to gnd. it is also the main thermal path. 1.58 [0.062] 0.50 [0.020] 0.26 [0.010] 0.38 [0.015] 0.29 [0.011] 0.21 [0.008] 1.58 [0.062] 0.75 [0.030] ?0.38 [?0.015] 0.005 chamfer (8pl) plated thru (4pl) 1.20 [0.047] 0.50 [0.020] 0.25 [0.010] 1.20 [0.047] 0.46 [0.018] 0.53 [0.021] 3.17 [0.125]
6 of 8 preliminary eds-103079 rev h 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . SGB-2233(z) package drawing dimensions in millimeters (inches) refer to drawing posted at www.rfmd.com for tolerances. typical evaluation board schematic for 3.0v rfin rfout vcc nc nc gnd opti on nc nc nc vbias nc nc nc rfin nc rfout nc nc vcc c1 c2 c3 c4 l1
7 of 8 preliminary eds-103079 rev h 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . SGB-2233(z) evaluation board layout and bill of materials board material getek, 31mil thick, dk=4.2, 1oz copper component values by band *c4 is optional depending on application and fi ltering. not required for sgb device operation. note: the amplifier can be run from a 5v supply by simply inserting a 82 resistor in series with v cc . part identification the part will be symbolized with an ?sgb2233? for sn/pb pl ating or ?sgb22z? for rohs green compliant product. marking designator will be on the top surface of the package. ordering information designator 500mhz 850mhz 1950mhz 2400mhz c3 1000pf 1000pf 1000pf 1000pf c4* 1uf 1uf 1uf 1uf c1, c2 220pf 68pf 43pf 22pf l1 68nh 33nh 22nh 18nh part number reel size devices/reel SGB-2233 13? 3000 SGB-2233z 13? 3000 c3 c2 c1 l1 c4
8 of 8 preliminary eds-103079 rev h 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . SGB-2233(z)
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